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APT150GT120JR
1200V, 150A, VCE(ON) = 3.2V Typical
Thunderbolt IGBT(R)
The Thunderbolt IGBT(R) is a new generation of high voltage power IGBTs. Using NonPunch-Through Technology, the Thunderbolt IGBT(R) offers superior ruggedness and ultrafast switching speed.
E G C
E
Features
* Low Forward Voltage Drop * Low Tail Current * Integrated Gate Resistor Low EMI, High Reliability * RoHS Compliant * RBSOA and SCSOA Rated * High Frequency Switching to 50KHz * Ultra Low Leakage Current
S
ISOTOP (R)
OT
22
7
"UL Recognized"
file # E145592
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Maximum Ratings Symbol Parameter
VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified. Ratings
1200 20 170 90 450 450 830 -55 to 150 Watts C Amps Volts
Unit
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range
Static Electrical Characteristics Symbol Characteristic / Test Conditions
V(BR)CES VGE(TH) VCE(ON) Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 4mA) Gate Threshold Voltage (VCE = VGE, IC = 6mA, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 25C) Collector Emitter On Voltage (VGE = 15V, IC = 150A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) 2 Gate-Emitter Leakage Current (VGE = 20V) Integrated Gate Resistor
Min
1200 4.5 2.7 1.75
Typ
5.5 3.2 4.0 2
Max
6.5 3.7 150 TBD 900 3.25
Unit
Volts
ICES IGES RG(int)
A nA
B 6- 2008 052-6291 Rev
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) **tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy
4 4 5 6
APT150GT120JR
Test Conditions VGE = 0V, VCE = 25V f = 1MHz Min Gate Charge VGE = 15V VCE= 600V IC = 150A TJ = 150C, RG = 1.0 , VGE = 15V,
7
Typ 9300 1400 700 10 995 110 595
Max -
Unit
pF
450 -
V
nC
L = 100H, VCE= 1200V Inductive Switching (25C) VCC = 800V VGE = 15V IC = 150A RG = 2.2 TJ = +25C
A 80 N/A 570 70 TBD 24.3 12.7 80 165 635 75 TBD 33.5 14.8 ns ns mJ mJ
-
Inductive Switching (125C) VCC = 800V VGE = 15V IC = 150A RG = 2.2 TJ = 125C
-
Turn-On Switching Energy 5 Turn-Off Switching Energy
6
Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions
R
JC
Min
2500
Typ
29.2 -
Max
0.15 10 1.1 -
Unit
C/W gm in*lbf N*m Volts
Junction to Case Package Weight Terminals and Mounting Screws. RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
WT Torque VIsolation
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6291 Rev
B 6- 2008
Typical Performance Curves
350
V
GE
APT150GT120JR
350 17V IC, COLLECTOR CURRENT (A) 300 250 200 150 100 50 0 11V 15V 13V 12V
= 15V
300 IC, COLLECTOR CURRENT (A) 250 200 150 TJ= 150C 100 50 0 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) TJ= 25C TJ= 125C
10V 9V 8V
350 300 250 200 150 100 50
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
20 18 16 14 12 10
0 5 10 15 20 25 30 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 15-0A C T = 25C
J
IC, COLLECTOR CURRENT (A)
VCE = 240V VCE = 600V
8 6 4 2 0 0 200 400 600 800
VCE = 960V
TJ= -55C TJ= 25C TJ= 125C 0 2 4 6 8 10 12 14
0
1000
1200
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5 4 3 2 1 0
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics IC = 300A
7 6 5 4 3 2 1
GATE CHARGE (nC) FIGURE 4, Gate charge
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 300A
IC = 150A IC = 75A
IC = 150A IC = 75A
10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage 1.10
8
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 150 125 100 75 052-6291 Rev A 1 - 2008 50 25 0
0
0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.05 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 IC, DC COLLECTOR CURRENT (A)
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
50 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature
25
Typical Performance Curves
100 td(ON), TURN-ON DELAY TIME (ns) VGE = 15V td(OFF), TURN-OFF DELAY TIME (ns) 750
APT150GT120JR
80
600
VGE =15V,TJ=125C
60
450
VGE =15V,TJ=25C
40
300
20
0 50 100 150 200 250 300 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 400 350 300 tr, RISE TIME (ns) tr, FALL TIME (ns) 250 200 150 100 50 0 50 100 150 200 250 300 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 100 Eon2, TURN ON ENERGY LOSS (mJ)
V = 800V CE V = +15V GE R = 2.2
G
0
VCE = 800V TJ = 25C, or 125C RG = 2.2 L = 100H
150
VCE = 800V RG = 2.2 L = 100H
0 50 100 150 200 250 300 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 250
RG = 2.2, L = 100H, VCE = 800V
0
RG = 2.2, L = 100H, VCE = 800V
200
150
TJ = 25C, VGE = 15V
100
TJ = 25 or 125C,VGE = 15V
50
TJ = 125C, VGE = 15V
0
EOFF, TURN OFF ENERGY LOSS (mJ)
0 50 100 150 200 250 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 30 25 20 15 10
TJ = 25C
V = 800V CE V = +15V GE R = 2.2
G
0
80
TJ = 125C
60
TJ = 125C
40
TJ = 25C
20 0
5 0
0 50 100 150 200 250 300 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 300 SWITCHING ENERGY LOSSES (mJ) SWITCHING ENERGY LOSSES (mJ) 250 200 150 100 50 0
V = 800V CE V = +15V GE T = 125C
J
0 40 80 120 160 200 240 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 120 100 80 60 40 20 0
Eon2,150A Eoff,300A
V = 800V CE V = +15V GE R = 2.2
G
Eon2,300A
Eon2,300A
052-6291 Rev A 1 - 2008
Eoff,300A Eon2,150A Eoff,150A Eon2,75A Eoff,75A 0 4 8 12 16 20
Eoff,150A Eon2,75A Eoff,75A
RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Typical Performance Curves
100,000 500
APT150GT120JR
10,000
Cies
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
400
300
200
1,000
100
Coes 0 100 200 300 400 500 600 700 800 900 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage 100 Cres
200 400 600 800 1000 1200 1400 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0
0
0.16 ZJC, THERMAL IMPEDANCE (C/W) 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 10-4 0.1 0.05 10-3 SINGLE PULSE 0.5 0.3
Note:
D = 0.9 0.7
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-2 10-1 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
30 FMAX, OPERATING FREQUENCY (kHz) 25 20 15
100C
T = 125C J T = 75C C D = 50 % V = 800V CE R = 4.7
G
75C
TJ (C)
TC (C)
Fmax = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf fmax2 = Pdiss = Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
Dissipated Power (Watts)
ZEXT
.0315 .0175
.0897 .7078
.0282 12.16
10 5 0
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
0 10
052-6291 Rev A 1 - 2008
APT150GT120JR
10% Gate Voltage td(on) TJ = 125C
APT100DQ120
tr
V CC IC V CE
90% Collector Current 5% 5% 10% Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
90%
Figure 22, Turn-on Switching Waveforms and Definitions
TJ = 125C Gate Voltage
90% td(off) tf
Collector Voltage
10%
0
Switching Energy
Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193)
052-6291 Rev A 1 - 2008
1.95 (.077) 2.14 (.084)
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
38.0 (1.496) 38.2 (1.504)
* Emitter/Anode ) Dimensions in Millimeters and (Inches
Gate
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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